Just two months after the announcement of the world’s fastest LPDDR5X memory for mobile devices, SK hynix is already introducing the faster LPDDR5T memory. This memory is the final step in preparation for LPDDR6 chip transition. In order to highlight the extraordinary high quality of this new product, the LPDDR5 modification got the prefix “T”, which stands for Turbo.
LPDDR5T will run 13% faster than LPDDR5X, which is required by new mobile devices such as smartphones, AR / VR headsets, and other devices. It will also be used for artificial intelligence applications and particularly edge AI solutions such as robots, and other solutions.
The transmission speed of LPDDR5X chips, which were introduced in October 2013, is 8.5 Gb/s per contact. LPDDR5T memory has a speed of 9.6 Gb/s per contact. However, there was a slight increase in the consumption of chips, which indicates an increase energy efficiency.
SK hynix plans to begin mass production of LPDDR5T chip in the second half this year. Since microcircuit samples have been sent to many customers for their evaluation, products will be in high demand immediately. LPDDR5T will likely debut in final products at CES 2024 and will be available for general sale in winter and spring next year.
LPDDR5T microcircuits were manufactured using the fourth generation (10 nm) class process technology (under the designation SK hynix –1anm). The process technology called HKGM (High K Metal Gate), which is well-known for its ability to produce key transistors in memory cells, is used. A high dielectric coating is applied to the metal gates of transistors. It reduces leakage currents and increases their performance.
LPDDR5T chips operate in the ultra-low voltage range established by JEDEC for LPDDR5 memories: 1.01 to 1.12 V. This is before LPDDR6 memory. A faster LPDDR5 product may not be available. Samsung’s response to the “Turbo” label initiative by SK Hynix will be fascinating.